Diodes Incorporated DMT69M9LPDW-13
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DMT69M9LPDW-13
671-DMT69M9LPDW-13
晶体管 - FET,MOSFET - 阵列
8-PowerTDFN
大陆
立即发货

MOSFET BVDSS: 41V~60V POWERDI506
1最小包装量--
DMT69M9LPDW-13详情
Diodes Incorporated DMT69M9LPDW-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerTDFN
供应商器件包装
PowerDI5060-8 (Type UXD)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
11A (Ta), 44A (Tc)
Number of Elements per Chip
2
Package Type
PowerDI5060-8
Channel Mode
Enhancement
MSL
MSL 1 - Unlimited
Qualification
-
Transistor Polarity
N通道
Continuous Drain Current Id
44A
Factory Pack QuantityFactory Pack Quantity
2500
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Reel
子类别
MOSFETs
引脚数量
8
功率 - 最大
2.5W (Ta), 40.3W (Tc)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
12.5mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
2V @ 250μA
输入电容(Ciss)(Max)@Vds
2212pF @ 30V
门极电荷(Qg)(最大)@Vgs
33.5nC @ 10V
漏源电压 (Vdss)
60V
产品类别
MOSFET
信道型
N
场效应管特性
Standard
产品类别
MOSFET
DMT69M9LPDW-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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