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价格梯度
内地含税价
1
¥5.389138
10
¥5.084091
100
¥4.796311
500
¥4.524827
1000
¥4.268703
Diodes Incorporated DMT8008LFG-13
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DMT8008LFG-13
671-DMT8008LFG-13
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

MOSFET BVDSS: 61V~100V POWERDI33
--最小包装量--
¥
总价: ¥
DMT8008LFG-13详情
Diodes Incorporated DMT8008LFG-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
PowerDI3333-8
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
16A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
1W (Ta), 23.5W (Tc)
Base Product Number
DMT30
Continuous Drain Current Id
48
Vds - Drain-Source Breakdown Voltage
80 V
Typical Turn-On Delay Time
6.9 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
1 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.001058 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
37.7 nC
Rds On - Drain-Source Resistance
6.9 mOhms
Typical Turn-Off Delay Time
37 ns
Id - Continuous Drain Current
48 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Reel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
23.5
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
6.9mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 1mA
输入电容(Ciss)(Max)@Vds
2254 pF @ 40 V
门极电荷(Qg)(最大)@Vgs
37.7 nC @ 10 V
上升时间
12 ns
漏源电压 (Vdss)
80 V
Vgs(最大值)
±20V
产品类别
MOSFET
晶体管类型
1 N-Channel
场效应管特性
-
产品类别
MOSFET
DMT8008LFG-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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