Diodes Incorporated DMT8008LFG-13

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

PowerDI3333-8

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

16A (Ta), 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 1mA

Power Dissipation (Max)

1W (Ta), 23.5W (Tc)

Base Product Number

DMT30

Continuous Drain Current Id

48

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

6.9 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.001058 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

37.7 nC

Rds On - Drain-Source Resistance

6.9 mOhms

Typical Turn-Off Delay Time

37 ns

Id - Continuous Drain Current

48 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Reel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

23.5

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.9mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

2254 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

37.7 nC @ 10 V

上升时间

12 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET