Diodes Incorporated DMTH48M3SFVWQ-7

安装类型

Surface Mount, Wettable Flank

包装/外壳

8-PowerVDFN

引脚数

8

供应商器件包装

PowerDI3333-8 (SWP) Type UX

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

14.6A (Ta), 52.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

Power Dissipation (Max)

2.82W (Ta), 36.6W (Tc)

Continuous Drain Current Id

52.4

Number of Elements per Chip

1

Package Type

PowerDI3333-8

Channel Mode

Enhancement

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

5.36 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

2.82 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.001058 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

12.1 nC

Rds On - Drain-Source Resistance

8.9 mOhms

Typical Turn-Off Delay Time

12.1 ns

Id - Continuous Drain Current

52.4 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

36.6

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.9mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

897 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

12.1 nC @ 10 V

上升时间

4.54 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET