Diodes Incorporated DMTH61M8LPS-13

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PowerDI5060-8

厂商

Diodes Incorporated

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

225A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3V @ 250μA

Power Dissipation (Max)

3.2W (Ta), 187.5W (Tc)

Base Product Number

DMTH61

Continuous Drain Current Id

225

MSL

-

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

10.3 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

187.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003422 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

115.5 nC

Rds On - Drain-Source Resistance

1.6 mOhms

RoHS

Details

Typical Turn-Off Delay Time

108.3 ns

Id - Continuous Drain Current

225 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

187.5

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.6mOhm @ 30A, 10V

输入电容(Ciss)(Max)@Vds

8320 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

115.5 nC @ 10 V

上升时间

23.9 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET