Diodes Incorporated DMTH8008SPSQ-13

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PowerDI5060-8

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

Power Dissipation (Max)

1.6W (Ta), 100W (Tc)

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

92A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Continuous Drain Current Id

92

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

1.6 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003422 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

34 nC

Rds On - Drain-Source Resistance

7.8 mOhms

Typical Turn-Off Delay Time

29 ns

Id - Continuous Drain Current

92 A

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

100

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.8mOhm @ 14A, 10V

输入电容(Ciss)(Max)@Vds

1950 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

34 nC @ 10 V

上升时间

15 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET