Diodes Incorporated MMFTN3018W
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MMFTN3018W
671-MMFTN3018W
晶体管 - FET,MOSFET - 阵列
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MMFTN3018W datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at utmel
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MMFTN3018W详情
Diodes Incorporated MMFTN3018W重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.95
Automotive
无
PPAP
无
Category
小信号
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
0.1
Maximum Drain Source Resistance (MOhm)
8000@4V
Typical Input Capacitance @ Vds (pF)
13@5V
Maximum Power Dissipation (mW)
200
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Commercial
Mounting
表面贴装
Package Width
1.25
Package Length
2
PCB changed
3
Supplier Package
SOT-323
包装
卷带
零件状态
活跃
引脚数量
3
配置
Single
信道型
N
MMFTN3018W拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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