Diodes Incorporated ZXMP6A18DN8TC

表面安装

YES

终端数量

8

晶体管元件材料

SILICON

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

55@10V

Typical Gate Charge @ Vgs (nC)

23@5V|44@10V

Typical Gate Charge @ 10V (nC)

44

Typical Input Capacitance @ Vds (pF)

1580@30V

Maximum Power Dissipation (mW)

2100

Typical Fall Time (ns)

23

ECCN (US)

EAR99

EU RoHS

Compliant

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

1(Min)

Maximum Continuous Drain Current (A)

3.7

Typical Rise Time (ns)

5.8

Typical Turn-Off Delay Time (ns)

55

Typical Turn-On Delay Time (ns)

4.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

Package Description

SOIC-8

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

40

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

ZXMP6A18DN8TC

Package Shape

RECTANGULAR

Manufacturer

Zetex / Diodes Inc

Number of Elements

2

Part Life Cycle Code

Transferred

Ihs Manufacturer

ZETEX PLC

Risk Rank

5.14

Drain Current-Max (ID)

3.7 A

包装

卷带

JESD-609代码

e3

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn)

子类别

其他晶体管

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-PDSO-G8

资历状况

不合格

配置

双排双泄

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

最大漏极电流 (Abs) (ID)

4.8 A

漏极-源极导通最大电阻

0.055 Ω

脉冲漏极电流-最大值(IDM)

23 A

DS 击穿电压-最小值

60 V

信道型

P

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

2.1 W