GSI Technology GS881E32CGT-200V

包装/外壳

TQFP-100

引脚数

100

Maximum Clock Rate

153.8@Flow-Through/200@Pipelined MHz

Supplier Package

TQFP

Data Rate Architecture

SDR

Typical Operating Supply Voltage

1.8, 2.5 V

Minimum Operating Supply Voltage

1.7, 2.3 V

Timing Type

Synchronous

Number of Words

256 kWords

Number of I/O Lines

32 Bit

Maximum Operating Supply Voltage

2, 2.7 V

Mounting

表面贴装

RoHS

Compliant

Moisture Sensitive

有

Maximum Clock Frequency

200 MHz

Maximum Operating Temperature

+ 70 C

Supply Voltage-Max

2.7 V

Minimum Operating Temperature

0 C

Factory Pack QuantityFactory Pack Quantity

66

Supply Voltage-Min

1.7 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

SyncBurst

Memory Types

SDR

Usage Level

Commercial grade

操作温度

0 to 70 °C

系列

GS881E32CGT

包装

Tray

类型

DCD Pipeline/Flow Through

最高工作温度

70 °C

最小工作温度

0 °C

子类别

Memory & Data Storage

内存大小

9 Mbit

端口的数量

4

电源电流-最大值

125 mA, 150 mA

访问时间

6.5 ns

建筑学

Flow-Through/Pipelined

组织结构

256 k x 32

地址总线宽度

18 Bit

产品类别

SRAM

密度

8 Mbit

筛选水平

Commercial

产品类别

SRAM

辐射硬化

无