Infineon AUIRF2804STRR7P

表面安装

YES

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

320

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (MOhm)

1.6@10V

Typical Gate Charge @ Vgs (nC)

170@10V

Typical Gate Charge @ 10V (nC)

170

Typical Input Capacitance @ Vds (pF)

6930@25V

Maximum Power Dissipation (mW)

330000

Typical Fall Time (ns)

100

Typical Rise Time (ns)

150

Typical Turn-Off Delay Time (ns)

110

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.67(Max)

PCB changed

6

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Package Description

,

Risk Rank

5.82

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Part Life Cycle Code

Obsolete

Manufacturer

Infineon Technologies AG

Manufacturer Part Number

AUIRF2804STRR7P

Rohs Code

有

Operating Temperature-Max

175 °C

包装

卷带

零件状态

Obsolete

子类别

FET 通用电源

Reach合规守则

compliant

引脚数量

7

配置

单一泉源

操作模式

增强型MOSFET

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

240 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

330 W