Infineon AUIRF7732S2TR1

底架

表面贴装

引脚数

7

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

16

Maximum Continuous Drain Current (A)

14

Maximum Drain Source Resistance (mOhm)

6.95@10V

Typical Gate Charge @ Vgs (nC)

22

Maximum Power Dissipation (mW)

2500

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

0.49(Max)

Package Width

3.95(Max)

Package Length

3.95(Max)

PCB changed

7

Supplier Package

Direct-FET SC

Lead Shape

No Lead

Number of Elements

1

RoHS

Compliant

Turn Off Delay Time

24 ns

Package Description

,

Manufacturer Part Number

AUIRF7732S2TR1

Manufacturer

International Rectifier

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.38

包装

卷带

零件状态

Obsolete

最高工作温度

175 °C

最小工作温度

-55 °C

最大功率耗散

41 W

Reach合规守则

unknown

引脚数量

7

配置

Single

功率耗散

41 W

接通延迟时间

9.6 ns

上升时间

123 ns

漏源电压 (Vdss)

40 V

连续放电电流(ID)

58 A

阈值电压

1.8 V

栅极至源极电压(Vgs)

16 V

漏源击穿电压

40 V

输入电容

1.7 nF

信道型

N

漏源电阻

6.6 mΩ

栅源电压

1.8 V

宽度

3.95 mm

高度

570 µm

长度

4.85 mm

达到SVHC

无SVHC

辐射硬化

无