Infineon BSC028N06NSXT

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

100

Maximum Drain Source Resistance (mOhm)

2.8@10V

Typical Gate Charge @ Vgs (nC)

37@10V

Typical Gate Charge @ 10V (nC)

37

Typical Input Capacitance @ Vds (pF)

2700@30V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

8

Typical Rise Time (ns)

38

Typical Turn-Off Delay Time (ns)

19

Typical Turn-On Delay Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

5.9

Package Length

5.15

PCB changed

8

Standard Package Name

SON

Supplier Package

TDSON EP

Lead Shape

No Lead

包装

卷带

零件状态

Unconfirmed

引脚数量

8

配置

单四漏三源

信道型

N