Infineon BSC059N03SGXT

表面安装

YES

终端数量

8

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

17.5

Maximum Drain Source Resistance (MOhm)

5.5@10V

Typical Gate Charge @ Vgs (nC)

15@5V

Typical Input Capacitance @ Vds (pF)

2010@15V

Maximum Power Dissipation (mW)

2800

Typical Fall Time (ns)

3.8

Typical Rise Time (ns)

4.8

Typical Turn-Off Delay Time (ns)

22

Typical Turn-On Delay Time (ns)

5.7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1

Package Width

5.9

Package Length

5.15

PCB changed

8

Standard Package Name

SON

Supplier Package

TDSON EP

Lead Shape

No Lead

Package Description

SMALL OUTLINE, R-PDSO-F8

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

40

Manufacturer Part Number

BSC059N03SGXT

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.83

Drain Current-Max (ID)

17.5 A

包装

卷带

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

哑光锡

附加功能

逻辑电平兼容

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-PDSO-F8

资历状况

不合格

配置

单四漏三源

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

0.0086 Ω

脉冲漏极电流-最大值(IDM)

200 A

DS 击穿电压-最小值

30 V

信道型

N

雪崩能量等级（Eas）

150 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR