Infineon BSP324L6327XT

底架

表面贴装

引脚数

4

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

400

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.3

Maximum Continuous Drain Current (A)

0.17

Maximum Drain Source Resistance (MOhm)

25000@10V

Typical Gate Charge @ Vgs (nC)

4.54@10V

Typical Gate Charge @ 10V (nC)

4.54

Typical Gate to Drain Charge (nC)

2.17

Typical Gate to Source Charge (nC)

0.35

Typical Reverse Recovery Charge (nC)

104

Typical Input Capacitance @ Vds (pF)

103@25V

Typical Output Capacitance (pF)

9.2

Maximum Power Dissipation (mW)

1800

Typical Fall Time (ns)

68

Typical Rise Time (ns)

4.4

Typical Turn-Off Delay Time (ns)

17

Typical Turn-On Delay Time (ns)

4.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.6

Package Width

3.5

Package Length

6.5

PCB changed

3

Tab

Tab

Standard Package Name

SOT

Supplier Package

SOT-223

Lead Shape

Gull-wing

Number of Elements

1

RoHS

Compliant

包装

卷带

零件状态

Obsolete

最高工作温度

150 °C

最小工作温度

-55 °C

引脚数量

4

配置

单排双泄

功率耗散

1.8 W

连续放电电流(ID)

170 mA

栅极至源极电压(Vgs)

20 V

信道型

N