Infineon BSS192E6327

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

EU RoHS

供应商未确认

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

240

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.15@Ta=34C

Maximum Drain Source Resistance (MOhm)

20000@10V

Typical Input Capacitance @ Vds (pF)

95@25V

Maximum Power Dissipation (mW)

1000

Typical Fall Time (ns)

42

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

25

Typical Turn-On Delay Time (ns)

8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5

Package Width

2.5

Package Length

4.5

PCB changed

3

Tab

Tab

Standard Package Name

SOT

Supplier Package

SOT-89

Lead Shape

Flat

Package Description

SMALL OUTLINE, R-PSSO-F3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Manufacturer Part Number

BSS192E6327

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

6.75

Drain Current-Max (ID)

0.15 A

包装

卷带

零件状态

Obsolete

ECCN 代码

EAR99

附加功能

逻辑电平兼容

HTS代码

8541.29.00.95

端子位置

SINGLE

终端形式

FLAT

Reach合规守则

unknown

引脚数量

4

JESD-30代码

R-PSSO-F3

资历状况

不合格

配置

单排双泄

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

漏极-源极导通最大电阻

20 Ω

DS 击穿电压-最小值

240 V

信道型

P

场效应管技术

METAL-OXIDE SEMICONDUCTOR

反馈上限-最大值 (Crss)

15 pF