Infineon BSS84PL6327XT

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

有

PPAP

Unknown

Category

小信号

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

0.17

Maximum Drain Source Resistance (mOhm)

8000@10V

Typical Gate Charge @ Vgs (nC)

1@10V

Typical Gate Charge @ 10V (nC)

1

Typical Gate to Drain Charge (nC)

0.3

Typical Gate to Source Charge (nC)

0.25

Typical Reverse Recovery Charge (nC)

10

Typical Input Capacitance @ Vds (pF)

15@25V

Typical Output Capacitance (pF)

6

Maximum Power Dissipation (mW)

360

Typical Fall Time (ns)

20.5

Typical Rise Time (ns)

16.2

Typical Turn-Off Delay Time (ns)

8.6

Typical Turn-On Delay Time (ns)

6.7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

Mounting

表面贴装

Package Height

1(Max)

Package Width

1.3

Package Length

2.9

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Manufacturer Part Number

BSS84PL6327XT

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.73

Drain Current-Max (ID)

0.17 A

包装

卷带

零件状态

Obsolete

附加功能

逻辑电平兼容

端子位置

DUAL

终端形式

鸥翼

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PDSO-G3

配置

Single

操作模式

增强型MOSFET

极性/通道类型

P-CHANNEL

漏极-源极导通最大电阻

8 Ω

DS 击穿电压-最小值

60 V

信道型

P

场效应管技术

METAL-OXIDE SEMICONDUCTOR

反馈上限-最大值 (Crss)

3 pF