Infineon BUY25CS54A01SAMZZZA1

EU RoHS

不合规

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

54

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

30@10V

Typical Gate Charge @ Vgs (nC)

180(Max)@10V

Typical Gate Charge @ 10V (nC)

180(Max)

Typical Input Capacitance @ Vds (pF)

14000(Max)@100V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

80(Max)

Typical Rise Time (ns)

80(Max)

Typical Turn-Off Delay Time (ns)

130(Max)

Typical Turn-On Delay Time (ns)

80(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Width

17.53

Package Length

13.34

PCB changed

3

Supplier Package

SMD-2

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N