参数名
参数值
参数名
参数值
材料
Si
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
45
Maximum Drain Source Resistance (MOhm)
17@12V
Typical Gate Charge @ Vgs (nC)
160(Max)@12V
Typical Input Capacitance @ Vds (pF)
8040@25V
Maximum Power Dissipation (mW)
208000
Typical Fall Time (ns)
35(Max)
Typical Rise Time (ns)
150(Max)
Typical Turn-Off Delay Time (ns)
100(Max)
Typical Turn-On Delay Time (ns)
35(Max)
Minimum Operating Temperature (°C)
-55
EU RoHS
供应商未确认
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
13.84(Max)
Package Width
6.6(Max)
Package Length
13.84(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO-254-AA
Supplier Package
TO-254AA
Lead Shape
通孔
零件状态
活跃
引脚数量
3
配置
Single
信道型
P