Infineon DATA-JANSR2N7626UB

EU RoHS

供应商未确认

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

CMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±10

Maximum Continuous Drain Current (A)

0.53

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

3.6(Max)@4.5V

Typical Input Capacitance @ Vds (pF)

167@25V

Maximum Power Dissipation (mW)

570

Typical Fall Time (ns)

27(Max)

Typical Rise Time (ns)

22(Max)

Typical Turn-Off Delay Time (ns)

27(Max)

Typical Turn-On Delay Time (ns)

22(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

表面贴装

Package Height

1.42(Max)

Package Width

2.74(Max)

Package Length

3.25(Max)

PCB changed

4

Standard Package Name

SMD

Supplier Package

UB

Lead Shape

No Lead

零件状态

活跃

引脚数量

4

配置

Single

信道型

P