Infineon FA211801EV4XP

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

12

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

50(Typ)@10V

Maximum Power Dissipation (mW)

565000

Output Power (W)

180

Typical Power Gain (dB)

15.5

Maximum Frequency (MHz)

2170

Minimum Frequency (MHz)

2110

Typical Drain Efficiency (%)

38.5

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

200

Mounting

Screw

Package Height

4.11

Package Width

23.37

Package Length

34.04

PCB changed

3

Supplier Package

Case 30260

包装

Tray

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

2-Carrier W-CDMA|CW