Infineon GRP-DATA-JANSG2N7269

EU RoHS

不合规

ECCN (US)

3A001.a.1.a

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

26

Maximum Drain Source Resistance (MOhm)

110@12V

Typical Gate Charge @ Vgs (nC)

170(Max)@12V

Typical Input Capacitance @ Vds (pF)

4700@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

140(Max)

Typical Rise Time (ns)

140(Max)

Typical Turn-Off Delay Time (ns)

140(Max)

Typical Turn-On Delay Time (ns)

33(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

通孔

Package Height

13.84(Max)

Package Width

6.6(Max)

Package Length

13.84(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-254-AA

Supplier Package

TO-254AA

Lead Shape

通孔

零件状态

活跃

引脚数量

3

配置

Single

信道型

N