Infineon IPP065N03LGHKSA1

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (mOhm)

6.5@10V

Typical Gate Charge @ Vgs (nC)

23@10V

Typical Gate Charge @ 10V (nC)

23

Typical Input Capacitance @ Vds (pF)

1800@15V

Maximum Power Dissipation (mW)

56000

Typical Fall Time (ns)

3.4

Typical Rise Time (ns)

4.2

Typical Turn-Off Delay Time (ns)

21

Typical Turn-On Delay Time (ns)

5.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.25

Package Width

4.4

Package Length

10

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Lead Shape

通孔

包装

Tube

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N