Infineon IPP139N08N3GHKSA1

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

80

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

45

Maximum Drain Source Resistance (MOhm)

13.9@10V

Typical Gate Charge @ Vgs (nC)

19@10V

Typical Gate Charge @ 10V (nC)

19

Typical Input Capacitance @ Vds (pF)

1300@40V

Maximum Power Dissipation (mW)

79000

Typical Fall Time (ns)

5

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

18

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.25

Package Width

4.4

Package Length

10

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Lead Shape

通孔

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Manufacturer Part Number

IPP139N08N3GHKSA1

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.82

Drain Current-Max (ID)

45 A

包装

Tube

零件状态

Obsolete

ECCN 代码

EAR99

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PSFM-T3

配置

Single

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-220AB

漏极-源极导通最大电阻

0.0139 Ω

脉冲漏极电流-最大值(IDM)

180 A

DS 击穿电压-最小值

80 V

信道型

N

雪崩能量等级（Eas）

50 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR