Infineon IPP65R110CFDAXK

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

CoolMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

31.2

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1.5

Maximum Drain Source Resistance (mOhm)

110@10V

Typical Gate Charge @ Vgs (nC)

118@10V

Typical Gate Charge @ 10V (nC)

118

Typical Input Capacitance @ Vds (pF)

3240@100V

Maximum Power Dissipation (mW)

277800

Typical Fall Time (ns)

6

Typical Rise Time (ns)

11

Typical Turn-Off Delay Time (ns)

68

Typical Turn-On Delay Time (ns)

16

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

Mounting

通孔

Package Height

9.45(Max)

Package Width

4.57(Max)

Package Length

10.36(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Lead Shape

通孔

包装

Tube

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N