Infineon IRF460PBF

表面安装

NO

终端数量

2

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

21

Maximum Drain Source Resistance (MOhm)

310@10V

Typical Gate Charge @ Vgs (nC)

190(Max)@10V

Typical Gate Charge @ 10V (nC)

190(Max)

Typical Input Capacitance @ Vds (pF)

4300@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

98(Max)

Typical Rise Time (ns)

120(Max)

Typical Turn-Off Delay Time (ns)

130(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

7.74(Max)

Package Width

25.53(Max)

Package Length

39.37(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-204-AA

Supplier Package

TO-3

Lead Shape

通孔

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Reflow Temperature-Max (s)

未说明

Drain Current-Max (ID)

21 A

Risk Rank

5.68

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Part Life Cycle Code

活跃

Number of Elements

1

Manufacturer

Infineon Technologies AG

Package Shape

ROUND

Manufacturer Part Number

IRF460PBF

Rohs Code

有

Operating Temperature-Max

150 °C

零件状态

Unconfirmed

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

JESD-30代码

O-MBFM-P2

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-204AE

漏极-源极导通最大电阻

0.31 Ω

脉冲漏极电流-最大值(IDM)

84 A

DS 击穿电压-最小值

500 V

信道型

N

雪崩能量等级（Eas）

1200 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR