Infineon IRF6645PBF

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

DirectFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.9

Maximum Continuous Drain Current (A)

5.7

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (mOhm)

35@10V

Typical Gate Charge @ Vgs (nC)

14@10V

Typical Gate Charge @ 10V (nC)

14

Typical Input Capacitance @ Vds (pF)

890@25V

Maximum Power Dissipation (mW)

2200

Typical Fall Time (ns)

5.1

Typical Rise Time (ns)

5

Typical Turn-Off Delay Time (ns)

18

Typical Turn-On Delay Time (ns)

9.2

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.53(Max)

Package Width

3.95(Max)

Package Length

3.95(Max)

PCB changed

7

Supplier Package

Direct-FET SJ

Lead Shape

No Lead

零件状态

Unconfirmed

引脚数量

7

配置

单四漏双源

信道型

N