Infineon IRF7343ITRPBF

表面安装

YES

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3.4@P Channel|4.7@N Channel

Maximum Drain Source Resistance (mOhm)

105@10V@P Channel|50@10V@N Channel

Typical Gate Charge @ Vgs (nC)

26@10V@P Channel|24@10V@N Channel

Typical Gate Charge @ 10V (nC)

26@P Channel|24@N Channel

Typical Input Capacitance @ Vds (pF)

740@25V@N Channel|690@25V@P Channel

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

13@N Channel|22@P Channel

Typical Rise Time (ns)

10@P Channel|3.2@N Channel

Typical Turn-Off Delay Time (ns)

43@P Channel|32@N Channel

Typical Turn-On Delay Time (ns)

14@P Channel|8.3@N Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

Package Description

,

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IRF7343ITRPBF

Manufacturer

International Rectifier

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.54

包装

卷带

零件状态

Obsolete

子类别

其他晶体管

Reach合规守则

unknown

引脚数量

8

配置

双排双泄

操作模式

增强型MOSFET

极性/通道类型

N-CHANNEL AND P-CHANNEL

最大漏极电流 (Abs) (ID)

4.7 A

信道型

P|N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

2 W