Infineon IRF7456TRPBF-1

安装类型

表面贴装

包装/外壳

8-SOIC (0.154, 3.90mm Width)

表面安装

YES

供应商器件包装

8-SOIC

HTS

8541.21.00.95

ECCN (US)

EAR99

EU RoHS

Compliant

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±12

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

16

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

20

Maximum Drain Source Resistance (MOhm)

6.5@10V

Typical Gate Charge @ Vgs (nC)

41@5V

Typical Input Capacitance @ Vds (pF)

3640@15V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

52

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

50

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

2.5W (Ta)

Product Status

Obsolete

Moisture Sensitivity Levels

1

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IRF7456TRPBF-1

Manufacturer

Infineon Technologies AG

Part Life Cycle Code

生命周期结束

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.3

包装

卷带

操作温度

-55°C ~ 150°C (TJ)

系列

HEXFET®

零件状态

Obsolete

子类别

FET 通用电源

技术

MOSFET (Metal Oxide)

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

8

配置

单四漏三源

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.5mOhm @ 16A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 250µA

输入电容(Ciss)(Max)@Vds

3640 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

62 nC @ 5 V

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

16 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

2.5 W

场效应管特性

-