Infineon IRF7901D1PBF

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

6.2

Maximum Drain Source Resistance (mOhm)

[email protected]@Q 1|[email protected]@Q 2

Typical Gate Charge @ Vgs (nC)

7.6@5V@Q 1|15.5@5V@Q 2

Typical Input Capacitance @ Vds (pF)

780@16V@Q 1|1810@16V@Q 2

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

8@Q 1|5.2@Q 2

Typical Rise Time (ns)

13.8@Q 1|16.4@Q 2

Typical Turn-Off Delay Time (ns)

14.7@Q 1|14.6@Q 2

Typical Turn-On Delay Time (ns)

7.2@Q 1|10.4@Q 2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

8

配置

Dual

信道型

N