Infineon IRHG6110

表面安装

NO

终端数量

14

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

4

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.75@P Channel|1@N Channel

Maximum Drain Source Resistance (MOhm)

1200@12V@P Channel|700@12V@N Channel

Typical Gate Charge @ Vgs (nC)

15(Max)@12V@P Channel|11(Max)@12V@N Channel

Typical Input Capacitance @ Vds (pF)

335@25V@P Channel|300@25V@N Channel

Maximum Power Dissipation (mW)

1400

Typical Fall Time (ns)

51(Max)@P Channel|45(Max)@N Channel

Typical Rise Time (ns)

19(Max)@P Channel|16(Max)@N Channel

Typical Turn-Off Delay Time (ns)

66(Max)@P Channel|65(Max)@N Channel

Typical Turn-On Delay Time (ns)

22(Max)@P Channel|20(Max)@N Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

3.3(Max)

Package Width

7.74(Max)

Package Length

19.3(Max)

PCB changed

14

Standard Package Name

MO-036AB

Supplier Package

MO-036AB

Package Description

IN-LINE, R-CDIP-T14

Package Style

IN-LINE

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Manufacturer Part Number

IRHG6110

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

4

Part Life Cycle Code

Transferred

Ihs Manufacturer

INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC

Risk Rank

7.83

Part Package Code

DIP

Drain Current-Max (ID)

1 A

无铅代码

无

零件状态

活跃

ECCN 代码

EAR99

附加功能

HIGH RELIABILITY

HTS代码

8541.29.00.75

端子位置

DUAL

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

14

JESD-30代码

R-CDIP-T14

资历状况

不合格

配置

Quad

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL AND P-CHANNEL

JEDEC-95代码

MO-036AB

漏极-源极导通最大电阻

0.7 Ω

脉冲漏极电流-最大值(IDM)

4 A

DS 击穿电压-最小值

100 V

信道型

N|P

雪崩能量等级（Eas）

56 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR