Infineon IRHMK593160

材料

Si

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

Supplier Package

TO-254AA

Tab

Tab

PCB changed

3

Package Length

13.84(Max)

Package Width

6.6(Max)

Package Height

13.84(Max)

Mounting

通孔

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

35(Max)

Typical Turn-Off Delay Time (ns)

70(Max)

Typical Rise Time (ns)

140(Max)

Typical Fall Time (ns)

45(Max)

Maximum Power Dissipation (mW)

208000

Typical Input Capacitance @ Vds (pF)

6110@25V

Typical Gate Charge @ Vgs (nC)

170(Max)@12V

Maximum Drain Source Resistance (MOhm)

50@12V

Maximum IDSS (uA)

10

Maximum Gate Source Leakage Current (nA)

100

Maximum Continuous Drain Current (A)

45

Maximum Gate Threshold Voltage (V)

4

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

100

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

R5

Category

功率MOSFET

PPAP

无

零件状态

Preliminary

引脚数量

3

配置

Single

信道型

P