Infineon IRHNJ63C30

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3.4

Maximum Drain Source Resistance (MOhm)

3100@12V

Typical Gate Charge @ Vgs (nC)

52(Max)@12V

Typical Gate Charge @ 10V (nC)

52(Max)

Typical Input Capacitance @ Vds (pF)

1222@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

17(Max)

Typical Rise Time (ns)

17(Max)

Typical Turn-Off Delay Time (ns)

44(Max)

Typical Turn-On Delay Time (ns)

25(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.61(Max)

Package Width

10.28(Max)

Package Length

7.64(Max)

PCB changed

3

Standard Package Name

SMD

Supplier Package

SMD-0.5

Lead Shape

No Lead

零件状态

活跃

引脚数量

3

配置

Single

信道型

N