Infineon IRLML2502TRPBF-1

表面安装

YES

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HEXFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±12

Maximum Gate Threshold Voltage (V)

1.2

Maximum Continuous Drain Current (A)

4.2

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

8@5V

Typical Input Capacitance @ Vds (pF)

740@15V

Maximum Power Dissipation (mW)

1250

Typical Fall Time (ns)

26

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

54

Typical Turn-On Delay Time (ns)

7.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.02(Max)

Package Width

1.4(Max)

Package Length

3.04(Max)

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

Moisture Sensitivity Levels

1

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IRLML2502TRPBF-1

Manufacturer

Infineon Technologies AG

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.31

包装

卷带

零件状态

NRND

ECCN 代码

EAR99

子类别

FET 通用电源

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

配置

Single

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

4.2 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

1.25 W