Infineon IRLML6402TRPBF-1

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

Micro3™/SOT-23

Automotive

无

ECCN (US)

EAR99

EU RoHS

Compliant

Typical Input Capacitance @ Vds (pF)

633@10V

Typical Gate Charge @ Vgs (nC)

8@5V

Maximum Drain Source Resistance (mOhm)

[email protected]

Maximum IDSS (uA)

1

Maximum Gate Source Leakage Current (nA)

100

Maximum Continuous Drain Current (A)

3.7

Maximum Gate Threshold Voltage (V)

1.2

Maximum Gate Source Voltage (V)

±12

Maximum Drain Source Voltage (V)

20

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

HEXFET

Category

功率MOSFET

PPAP

无

Maximum Power Dissipation (mW)

1300

Typical Fall Time (ns)

381

Typical Rise Time (ns)

48

Typical Turn-Off Delay Time (ns)

588

Typical Turn-On Delay Time (ns)

350

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.02(Max)

Package Width

1.4(Max)

Package Length

3.04(Max)

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

厂商

Infineon Technologies

Power Dissipation (Max)

1.3W (Ta)

Product Status

Obsolete

Package Description

,

Rohs Code

有

Manufacturer Part Number

IRLML6402TRPBF-1

Manufacturer

International Rectifier

Part Life Cycle Code

Transferred

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

5.66

包装

卷带

操作温度

-55°C ~ 150°C (TJ)

系列

HEXFET®

零件状态

Obsolete

技术

MOSFET (Metal Oxide)

Reach合规守则

unknown

引脚数量

3

配置

Single

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

65mOhm @ 3.7A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.2V @ 250µA

输入电容(Ciss)(Max)@Vds

633 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

12 nC @ 5 V

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

信道型

P

场效应管特性

-