Infineon JANSF2N7616UBCN

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

出口接触方式

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±10

Maximum Continuous Drain Current (A)

0.8

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

3.6(Max)@4.5V

Typical Input Capacitance @ Vds (pF)

166@25V

Maximum Power Dissipation (mW)

600

Typical Fall Time (ns)

13(Max)

Typical Rise Time (ns)

24(Max)

Typical Turn-Off Delay Time (ns)

30(Max)

Typical Turn-On Delay Time (ns)

8(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Mounting

表面贴装

Package Height

1.75(Max)

Package Width

2.74(Max)

Package Length

3.25(Max)

PCB changed

3

Supplier Package

UBCN型壳体

Package Description

SMALL OUTLINE, R-XDSO-N3

Package Style

小概要

Package Body Material

UNSPECIFIED

Manufacturer Part Number

JANSF2N7616UBCN

Package Shape

RECTANGULAR

Manufacturer

Defense Logistics Agency

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

DEFENSE LOGISTICS AGENCY

Risk Rank

5.32

Drain Current-Max (ID)

0.8 A

零件状态

活跃

ECCN 代码

EAR99

附加功能

逻辑电平兼容

端子位置

DUAL

终端形式

无铅

Reach合规守则

unknown

引脚数量

3

参考标准

MIL-19500/744

JESD-30代码

R-XDSO-N3

资历状况

Qualified

配置

Single

操作模式

增强型MOSFET

箱体转运

ISOLATED

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

0.68 Ω

DS 击穿电压-最小值

60 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR