Infineon JANTXV2N6770

表面安装

NO

终端数量

2

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

12

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

500@10V

Typical Gate Charge @ Vgs (nC)

120(Max)@10V

Typical Gate Charge @ 10V (nC)

120(Max)

Typical Gate to Drain Charge (nC)

70(Max)

Typical Gate to Source Charge (nC)

19(Max)

Minimum Gate Threshold Voltage (V)

2

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

130(Max)

Typical Rise Time (ns)

190(Max)

Typical Turn-Off Delay Time (ns)

170(Max)

Typical Turn-On Delay Time (ns)

35(Max)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Military

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

48

Maximum Diode Forward Voltage (V)

1.7

Mounting

通孔

Package Height

7.74(Max)

Package Width

25.53(Max)

Package Length

39.37(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-204AE

Lead Shape

通孔

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

JANTXV2N6770

Package Shape

ROUND

Manufacturer

Microsemi Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

7.75

Part Package Code

TO-3

Drain Current-Max (ID)

12 A

JESD-609代码

e0

无铅代码

无

零件状态

活跃

端子表面处理

Tin/Lead (Sn/Pb)

子类别

FET 通用电源

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

参考标准

MIL-19500

JESD-30代码

O-MBFM-P2

资历状况

Qualified

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-3

最大漏极电流 (Abs) (ID)

12 A

漏极-源极导通最大电阻

0.4 Ω

DS 击穿电压-最小值

500 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

150 W