PTFA092213ELV4XWSA1详情
Infineon PTFA092213ELV4XWSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Channel Mode
Enhancement
Number of Elements per Chip
1
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
65
Maximum Gate Source Voltage (V)
12
Maximum VSWR
10
Maximum Drain Source Resistance (mOhm)
40(Typ)@10V
Output Power (W)
220
Typical Power Gain (dB)
17.5
Maximum Frequency (MHz)
960
Minimum Frequency (MHz)
920
Typical Drain Efficiency (%)
29
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
200
包装
Tray
零件状态
Unconfirmed
配置
Single
信道型
N
操作方式
2-Carrier W-CDMA|CW
PTFA092213ELV4XWSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。