Infineon SPD08N50C3ZT

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

CoolMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

7.6

Maximum Drain Source Resistance (mOhm)

600@10V

Typical Gate Charge @ Vgs (nC)

32@10V

Typical Gate Charge @ 10V (nC)

32

Typical Input Capacitance @ Vds (pF)

750@25V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

7

Typical Rise Time (ns)

5

Typical Turn-Off Delay Time (ns)

60

Typical Turn-On Delay Time (ns)

6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.41(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N