Infineon SPD18P06PT

EU RoHS

供应商未确认

ECCN (US)

EAR99

HTS

8541.21.00.75

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

SIPMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

18.6

Maximum Drain Source Resistance (MOhm)

130@10V

Typical Gate Charge @ Vgs (nC)

22@10V

Typical Gate Charge @ 10V (nC)

22

Typical Input Capacitance @ Vds (pF)

690@25V

Maximum Power Dissipation (mW)

80000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

5.8

Typical Turn-Off Delay Time (ns)

24.5

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.3

Package Width

6.22

Package Length

6.5

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

包装

卷带

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

P