Infineon SPD26N06S2L35T

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Category

功率MOSFET

Process Technology

OptiMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

30

Maximum Drain Source Resistance (MOhm)

35@10V

Typical Gate Charge @ Vgs (nC)

18@10V

Typical Gate Charge @ 10V (nC)

18

Typical Input Capacitance @ Vds (pF)

590@25V

Maximum Power Dissipation (mW)

68000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

21

Typical Turn-Off Delay Time (ns)

29

Typical Turn-On Delay Time (ns)

6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

零件状态

Obsolete

配置

Single

信道型

N