Infineon Technologies BSO615CGXUMA1

包装/外壳

8-SOIC (0.154", 3.90mm Width)

安装类型

表面贴装

供应商器件包装

PG-DSO-8

Base Product Number

BSO615

Current - Continuous Drain (Id) @ 25℃

3.1A (Ta), 2A (Ta)

Product Status

活跃

厂商

Infineon Technologies

Vds - Drain-Source Breakdown Voltage

60 V

Moisture Sensitive

有

Typical Turn-On Delay Time

16 ns, 24 ns

Vgs th - Gate-Source Threshold Voltage

1.6 V, 1.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel, P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

1.2 S, 2.5 S

Channel Mode

Enhancement

Part # Aliases

BSO615C G SP005353856

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

13.5 nC, 15 nC

Rds On - Drain-Source Resistance

70 mOhms, 190 mOhms

RoHS

Details

Typical Turn-Off Delay Time

25 ns, 125 ns

Id - Continuous Drain Current

3.1 A, 2 A

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

N and P-Channel

Rds On(Max)@Id,Vgs

110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 20μA, 2V @ 450μA

输入电容(Ciss)(Max)@Vds

380pF @ 25V, 460pF @ 25V

门极电荷(Qg)(最大)@Vgs

22.5nC @ 10V, 20nC @ 10V

上升时间

75 ns, 105 ns

漏源电压 (Vdss)

60V

产品类别

MOSFET

晶体管类型

1 N-Channel, 1 P-Channel

场效应管特性

逻辑电平门

产品类别

MOSFET