Infineon Technologies BSS139IXTSA1

安装类型

表面贴装

包装/外壳

SOT-23-3

供应商器件包装

PG-SOT-23-3

Continuous Drain Current Id

100

Number of Elements per Chip

1

Package Type

SOT-23

Channel Mode

Depletion

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

250 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

360 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Part # Aliases

BSS139I SP005558631

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

2.3 nC

Rds On - Drain-Source Resistance

30 Ohms

RoHS

Details

Id - Continuous Drain Current

100 mA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

360mW (Ta)

Product Status

活跃

系列

BSS139I

包装

切割胶带

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

3

通道数量

1 Channel

功率耗散

360

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

14Ohm @ 100mA, 10V

不同 Id 时 Vgs(th)（最大值）

1V @ 56µA

输入电容(Ciss)(Max)@Vds

60 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

2.3 nC @ 5 V

漏源电压 (Vdss)

250 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET