Infineon Technologies IGLT65R055D2ATMA1

包装/外壳

PG-HDSOP-16

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Rds On - Drain-Source Resistance

66 mOhms

Vgs - Gate-Source Voltage

- 10 V

Vgs th - Gate-Source Threshold Voltage

1.6 V

Qg - Gate Charge

6.6 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

104 W

Channel Mode

Enhancement

类型

GaN Power Transistor

配置

Single

通道数量

1 Channel

晶体管类型

1 N-Channel

产品

Power Transistors