Infineon Technologies AG BF1009SE6327XT

材料

Si

ECCN (US)

EAR99

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

12

Maximum Gate Source Voltage (V)

±9@Gate 2|9@Gate 1

Maximum Continuous Drain Current (A)

0.025

Typical Input Capacitance @ Vds (pF)

2.1@9V@Gate 1

Typical Forward Transconductance (S)

0.3

Maximum Power Dissipation (mW)

200

Typical Power Gain (dB)

22

Maximum Frequency (MHz)

1000

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

AEC Qualified

有

AEC Qualified Number

AEC-Q101

Standard Package Name

TO-253-AA

Supplier Package

SOT-143

Military

无

Mounting

表面贴装

Package Height

1(Max)

Package Length

2.9

Package Width

1.3

PCB changed

4

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

4

配置

单双闸门

信道型

N

RoHS状态

符合RoHS标准