Infineon Technologies AG BF 2040W E6814
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BF 2040W E6814
1211-BF 2040W E6814
晶体管 - FET,MOSFET - 射频
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Trans RF FET N-CH 8V 0.04A Automotive 4-Pin(3 Tab) SOT-343 T/R
1最小包装量--
BF 2040W E6814详情
Infineon Technologies AG BF 2040W E6814重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
Si
ECCN (US)
EAR99
Channel Mode
Depletion
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
8
Maximum Gate Source Voltage (V)
6
Maximum Continuous Drain Current (A)
0.04
Typical Input Capacitance @ Vds (pF)
2.9@5V@Gate 1
Typical Forward Transconductance (S)
0.042
Maximum Power Dissipation (mW)
200
Typical Power Gain (dB)
23
Maximum Frequency (MHz)
1000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
AEC Qualified Number
AEC-Q101
Standard Package Name
SOT-343
Supplier Package
SOT-343
Military
无
Mounting
表面贴装
Package Height
0.9(Max)
Package Length
2
Package Width
1.25
PCB changed
3
Tab
Tab
Lead Shape
Gull-wing
Moisture Sensitivity Levels
1
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
BF2040W-E6814
Manufacturer
Infineon Technologies AG
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
5.84
包装
卷带
零件状态
Obsolete
ECCN 代码
EAR99
子类别
FET 通用电源
Reach合规守则
compliant
引脚数量
4
配置
单双闸门
操作模式
DUAL GATE, ENHANCEMENT MODE
极性/通道类型
N-CHANNEL
最大漏极电流 (Abs) (ID)
0.04 A
信道型
N
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.2 W
RoHS状态
符合RoHS标准
BF 2040W E6814拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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