Infineon Technologies AG BG 3123 E6327

表面安装

YES

ECCN (US)

EAR99

Channel Mode

Depletion

Package Height

0.9(Max)

Package Length

2

Package Width

1.25

PCB changed

6

Lead Shape

Gull-wing

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

8

Maximum Gate Source Voltage (V)

±6

Maximum Continuous Drain Current (A)

0.025

Typical Input Capacitance @ Vds (pF)

1.5@5V@Gate 1@Amp B|1.9@5V@Gate 1@Amp A

Typical Forward Transconductance (S)

0.3

Maximum Power Dissipation (mW)

200

Typical Power Gain (dB)

32@Amp A|30@Amp B

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Automotive

有

AEC Qualified Number

AEC-Q101

Standard Package Name

SOT-26

Supplier Package

SOT-363

Military

无

Mounting

表面贴装

Moisture Sensitivity Levels

1

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

BG3123E6327

Manufacturer

Infineon Technologies AG

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.83

包装

卷带

零件状态

Obsolete

子类别

FET 通用电源

Reach合规守则

unknown

引脚数量

6

配置

Dual

操作模式

DUAL GATE, ENHANCEMENT MODE

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

0.02 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

0.2 W

RoHS状态

符合RoHS标准