Infineon Technologies AG BG5412KE6327XT
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BG5412KE6327XT
1211-BG5412KE6327XT
晶体管 - FET,MOSFET - 射频
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Trans RF MOSFET N-CH 8V 0.025A Automotive 6-Pin SOT-363 T/R
1最小包装量--
BG5412KE6327XT详情
Infineon Technologies AG BG5412KE6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Channel Mode
Depletion
Number of Elements per Chip
2
Maximum Drain Source Voltage (V)
8
Maximum Gate Source Voltage (V)
±6
Maximum Continuous Drain Current (A)
0.025
Typical Input Capacitance @ Vds (pF)
2@5V@Gate 1@Amp B|2.2@5V@Gate 1@Amp A
Typical Output Capacitance @ Vds (pF)
0.8@5V@Amp B|0.9@5V@Amp A
Typical Forward Transconductance (S)
0.033@Amp A|0.03@Amp B
Maximum Power Dissipation (mW)
200
Typical Power Gain (dB)
34@Amp A|31@Amp B
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
AEC Qualified Number
AEC-Q101
Standard Package Name
SOT-26
Supplier Package
SOT-363
Military
无
Mounting
表面贴装
Package Height
0.9(Max)
Package Length
2
Package Width
1.25
PCB changed
6
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
引脚数量
6
配置
双共源
信道型
N
RoHS状态
符合RoHS标准
BG5412KE6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
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