Infineon Technologies AG F140451EV1XP

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

12

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

70(Typ)@10V

Maximum Power Dissipation (mW)

438000

Output Power (W)

150

Typical Power Gain (dB)

16.5

Maximum Frequency (MHz)

1700

Minimum Frequency (MHz)

1450

Typical Drain Efficiency (%)

29

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

200

Automotive

无

Supplier Package

Case 30260

Military

无

Mounting

Screw

Package Height

4.11

Package Length

34.04

Package Width

13.72

PCB changed

3

包装

Tray

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

DAB|2-Tone

RoHS状态

符合RoHS标准