Infineon Technologies AG F180101SV1XT

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

12

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

830(Typ)@10V

Maximum Power Dissipation (mW)

58000

Output Power (W)

10

Typical Power Gain (dB)

19

Maximum Frequency (MHz)

2170

Minimum Frequency (MHz)

1805

Typical Drain Efficiency (%)

37

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Supplier Package

Case 32259

Military

无

Mounting

表面贴装

Package Height

2.88

Package Length

7.37

Package Width

6.86

PCB changed

3

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

CW|W-CDMA|2-Tone|EDGE