Infineon Technologies AG FF150R17KE4
- 收藏
- 对比
FF150R17KE4
1211-FF150R17KE4
晶体管 - IGBT - 模块
62 mm
大陆
立即发货

Trans IGBT Module N-CH 1700V 150A 1100000mW 7-Pin 62MM-1 Tray
1最小包装量--
FF150R17KE4详情
Infineon Technologies AG FF150R17KE4重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
62 mm
表面安装
NO
终端数量
5
晶体管元件材料
SILICON
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1700
Typical Collector Emitter Saturation Voltage (V)
1.95
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
1100000
Maximum Continuous Collector Current (A)
150
Maximum Gate Emitter Leakage Current (uA)
0.1
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Supplier Package
62MM-1
Military
无
Mounting
Screw
Package Height
29
Package Length
106.4
Package Width
61.4
PCB changed
7
Manufacturer Part Number
FF150R17KE4
Manufacturer
Infineon
Maximum Gate Emitter Voltage
20 V
Pd - Power Dissipation
1100 W
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
1.95 V
Unit Weight
12 oz
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
10
Continuous Collector Current at 25 C
250 A
Mounting Styles
底座安装
Part # Aliases
SP000713524 FF150R17KE4HOSA1
Brand
Infineon Technologies
Tradename
TRENCHSTOP
RoHS
Details
Collector- Emitter Voltage VCEO Max
1700 V
Package Description
FLANGE MOUNT, R-XUFM-X5
Package Style
FLANGE MOUNT
Moisture Sensitivity Levels
1
Package Body Material
UNSPECIFIED
Turn-on Time-Nom (ton)
355 ns
Turn-off Time-Nom (toff)
930 ns
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
175 °C
Rohs Code
有
Package Shape
RECTANGULAR
Number of Elements
2
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
1.24
Part Package Code
MODULE
包装
Tray
系列
Trenchstop IGBT4 - E4
无铅代码
有
零件状态
活跃
ECCN 代码
EAR99
类型
Dual
子类别
IGBTs
技术
Si
端子位置
UPPER
终端形式
UNSPECIFIED
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
引脚数量
7
JESD-30代码
R-XUFM-X5
资历状况
不合格
配置
Dual
箱体转运
ISOLATED
晶体管应用
电源控制
电路型态
Half-Bridge
极性/通道类型
N-CHANNEL
产品类别
IGBT模块
信道型
N
最大耗散功率(Abs)
1100 W
集电极电流-最大值(IC)
250 A
集电极-发射器电压-最大值
1700 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
2.3 V
产品
IGBT硅模块
产品类别
IGBT模块
高度(毫米)
30.5 mm
RoHS状态
符合RoHS标准
FF150R17KE4拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。